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PD- 95897
IRGP20B120U-EP
INSULATED GATE BIPOLAR TRANSISTOR
Features
UltraFast Non Punch Through (NPT) Technology 10 s Short Circuit capability Square RBSOA Positive VCE(on) Temperature Coefficient Extended lead TO-247 package Lead-Free
UltraFast IGBT
C
VCES = 1200V
G E
VCE(on) typ. = 3.05V
VGE = 15V, IC = 20A, 25C
Benefits
Benchmark efficiency above 20KHz Optimized for Welding, UPS, and Induction Heating applications Rugged with UltraFast performance Low EMI Significantly Less Snubber required Excellent Current sharing in Parallel operation Longer leads for easier mounting
n-channel
TO-247AD
Absolute Maximum Ratings
Parameter
V CES IC @ TC = 25C I C @ TC = 100C I CM I LM V GE EAS @ TC =25C Collector-to-Emitter Breakdown Voltage Continuous Collector Current (Fig.1) Continuous Collector Current (Fig.1) Pulsed Collector Current (Fig.3, Fig. CT.5) Clamped Inductive Load Current(Fig.4, Fig. CT.2) Gate-to-Emitter Voltage Avalanche Energy, single pulse IC = 25A, VCC = 50V, RGE = 25ohm L = 200H (Fig. CT.6) Maximum Power Dissipation (Fig.2) Maximum Power Dissipation (Fig.2) Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
1200 40 20 120 120 20 65
Units
V A
V mJ W
PD @ TC = 25C P D @ TC = 100C TJ TSTG
300 120 -55 to + 150 300, (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm)
C
Thermal Resistance
Parameter
RJC RCS RJA Wt Z JC Junction-to-Case - IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Transient Thermal Impedance Junction-to-Case
Min.

(Fig.18)
Typ.
0.24 6 (0.21)
Max.
0.42 40
Units
C/W
g (oz)
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IRGP20B120U-EP
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES
Collector-to-Emitter Breakdown Voltage
V(BR)CES / Tj Temperature Coeff. of Breakdown Voltage
Min. 1200
Typ. +1.2 3.05 3.37 4.23 3.89 4.31 5.0 - 1.2 15.7
Collector-to-Emitter Saturation
VCE(on)
Voltage
VGE(th)
VGE(th) / Tj
Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance
4.0 13.6
Max. Units V V/C 3.45 3.80 4.85 V 4.50 5.06 6.0 V
o
Conditions
VGE = 0V,Ic =250 A VGE = 0V, Ic = 1 mA ( 25 -125 C ) IC = 20A, VGE = 15V IC = 25A, VGE = 15V IC = 40A, VGE = 15V IC = 20A, VGE = 15V, TJ = 125C IC = 25A, VGE = 15V, TJ = 125C VCE = VGE, IC = 250 A
o o
Fig.
5, 6 7, 8 9 10
8,9,10,11
mV/ C VCE = VGE, IC = 1 mA (25 -125 C)
gfe ICES IGES
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
17.8 250 420 750 1482 2200 100
S
VCE = 50V, IC = 20A, PW=80s VGE = 0V, VCE = 1200V
A VGE = 0V, VCE = 1200V, TJ =125C
VGE = 0V, VCE = 1200V, TJ =150C
nA
VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA
Total Gate charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Switching Loss * Turn-Off Switching Loss * Total Switching Loss * Turn-on Switching Loss * Turn-off Switching Loss * Total Switching Loss * Turn - on delay time Rise time Turn - off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
Typ. 169 24 82 850 425
Max. Units Conditions IC = 20A 254 36 nC VCC = 600V VGE = 15V 126 IC = 20A, VCC = 600V 1050 650 J VGE = 15V, Rg = 5, L = 200H
T J = 25 C, Energy losses include tail and diode reverse recovery
o
Fig.
17 CT 1
CT 4 WF1 WF2 12, 14 CT 4 WF 1 & 2 13, 15 CT 4 WF1 WF2
1275 1800 1350 1550 610 875 1960 2425 50 20 204 24 2200 210 85 65 30 230 35 ns J
Ic = 20A, VCC = 600V VGE = 15V, Rg = 5, L = 200H
T J = 125 C, Energy losses include tail and diode reverse recovery
o
Ic = 20A, VCC = 600V VGE = 15V, Rg = 5, L = 200H TJ = 125 C VGE = 0V
o
pF
VCC = 30V f = 1.0 MHz TJ = 150 C, Ic = 120A VCC = 1000V, VP = 1200V Rg = 5, VGE = +15V to 0V TJ = 150 C VCC = 900V, VP = 1200V Rg = 5, VGE = +15V to 0V
o o
16
4 CT 2
Reverse bias safe operating area
FULL SQUARE
CT 3 WF3
SCSOA Le
Short Circuit Safe Operating Area
10
---13
----
s
Internal Emitter Inductance
nH Measured 5 mm from the package.
* Used Diode HF40D120ACE
2
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IRGP20B120U-EP
Fig.1 - Maximum DC Collector Current vs. Case Temperature
50 45 40
Fig.2 - Power Dissipation vs. Case Temperature
320 280 240
35 P t o t ( W) 0 40 80 120 160
( A)
30 25 20 15 10 5 0
200 160 120 80 40 0 0 40 80 T C (C) 120 160
I
C
T C (C)
Fig.3 - Forward SOA T C =25C; Tj < 150C 1000 PULSED
2s
Fig.4 - Reverse Bias SOA Tj = 150C, V GE = 15V 1000
100
10s
100
100 s
( A)
10
1ms
C
I
I 10 1 1
1
10ms
DC
0.1 1 10 100 V CE (V) 1000 10000
C
( A)
10
100 V CE (V)
1000
10000
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IRGP20B120U-EP
Fig.5 - Typical IGBT Output Characteristics Tj= -40C; tp=300s 60 55 50 45 40 ( A) 35 30 25 20 15 10 5 0 0 1 2 3 V CE (V) 4 5 6
V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8V
Fig.6 - Typical IGBT Output Characteristics Tj=25C; tp=300s
60 55 50 45 40
V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8V
(A)
C
35 30 25 20 15 10 5 0 0 1 2 3 V CE (V) 4 5 6
I
C
Fig.7 - Typical IGBT Output Characteristics Tj=125C; tp=300s
60 55 50 45 40
V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8V
(A)
35 30 25 20 15 10 5 0 0 1 2 3 4 5 6
I
C
V CE (V)
4
I
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IRGP20B120U-EP
Fig.9 - Typical V CE vs V GE 8 Tj= -40C 20 18 16 14 (V)
( V) 20 18 16 14 12 10 8 6 4 2 0
Fig.10 - Typical V CE vs V GE 9 Tj= 25C
12 10 8 6 4 2 0 6 8 10 12 14 V GE (V) 16 18 20 I CE =10A I CE =20A I CE =40A
I CE =10A I CE =20A I CE =40A
CE
V
V
CE
6
8
10
12 14 V GE (V)
16
18
20
Fig.11 - Typical V CE vs V GE 10 Tj= 125C 20 18 16 14 ( V) 12
(A) 250 225 200 175 150
Fig.12 - Typ. Transfer Characteristics 11 V CE =20V; tp=20 s
Tj=25C Tj=125C
CE
10 8 6 4 2 0 6 8 10 12 14 V GE (V)
I CE =10A I CE =20A I CE =40A
125 100 75 50 25 0 Tj=125C Tj=25C
V
I
C
16
18
20
0
4
8 12 V GE (V)
16
20
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IRGP20B120U-EP
Fig.13 - Typical Energy Loss vs Ic 12 Tj=125C; L=200H; V CE =600V; Rg=22 ; V GE =15V
6000
Eon tdoff
Fig.14 - Typical Switching Time vs Ic 13 Tj=125C; L=200H; V CE =600V; Rg=22 ; V GE =15V
1000
5000
Energy (J)
4000
3000
Eoff
t (nS)
100
tr tdon tf
2000
1000
0 0 10 20 30 40 50
10 0 10 20 30 40 50
I C (A) Fig.15 - Typical Energy Loss vs Rg 14 Tj=125C; L=200H; V CE =600V; I CE =20A; V GE =15V
3000 2800 2600 2400 2200 Ener gy ( uJ) 2000 1800 1600 1400 1200 1000 800 600 400 200 0
0 5 10 15 20 25 30 35 40 45 50 55
I C (A)
Fig.16 - Typical Switching Time vs Rg 15 Tj=125C; L=200H; V CE =600V; I CE =20A; V GE =15V
1000
Eon tdoff
t ( nS)
Eoff
100
tdon tr tf
10
0 5 10 15 20 25 30 35 40 45 50 55
Rg (ohms)
Rg (ohms)
6
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IRGP20B120U-EP
Fig.22 - Typical Capacitance vs V CE 16 V GE =0V; f=1MHz
10000
Fig.23 - Typ. Gate Charge vs. V GE 17 I C =20A; L=600H
16 14 12
600V 800V
C ies
CapacI tance (pF)
1000
10
V GE ( V )
8 6
C oes
100
4
C res
2 0
10 0 20 40 60 80 100
0
40
80
120
160
200
V CE (V)
Q G , Total Gate Charge (nC)
Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case 18 10
1
D =0.5
0.2 0.1
0.1
0.05
P DM
0.02
t1 0.01
0.01
SINGLE PULSE
t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + T C
0.001 0.00001 0.00010 0.00100 0.01000 0.10000 1.00000 10.00000
t 1 , Rectangular Pulse Duration (sec)
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IRGP20B120U-EP
Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit
L
L VCC
0
DUT 1K
80 V
+ -
DUT
1000V
Rg
Fig. CT.3 - S.C. SOA Circuit
Fig. CT.4 - Switching Loss Circuit
Driver
DC
DIODE CLAMP
L
900V
DUT / DRIVER
Rg
DUT
VCC
Fig. CT.5 - Resistive Load Circuit
R = VCC
ICM
Fig. CT.6 - Unclamped Inductive Load Circuit
L
DUT
Rg
VCC
DUT
Rg
VCC
8
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IRGP20B120U-EP
Fig. WF.1 - Typ. Turn-off Loss Waveform @ Tj=125C using Fig. CT.4
1000 25
Fig. WF.2 - Typ. Turn-on Loss Waveform @ Tj=125C using Fig. CT.4
800 80
90% ICE
800
20 600
90% test current
60
600
t
f
15 400 VCE ( V) I CE ( A )
tr
40
TEST CURRENT
VCE ( V)
400
10
5% VCE
200
10% test current
20
5% VCE
200
5% ICE
5
0 0
Eof f Loss
0
Eon Loss
0
-200 -0.2 0.0 0.2 0.4 0.6 0.8 t i me (s)
-5
-200 -0.2
-20 -0.1 0.0 0.1 0.2 0.3 t i me (s)
Fig. WF.3- Typ. S.C. Waveform @ TC=150C using Fig. CT.3
1200 250
1000
200
800 V CE ( V )
150
600
100
400
50
200
0
0 -10 0 10 t i me (s) 20 30
-50
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I CE ( A )
I CE ( A )
9
IRGP20B120U-EP
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
EXAMPLE: THIS IS AN IRGP30B120KD-E WIT H ASSEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN T HE AS SEMBLY LINE "H" Note: "P" in as sembly line position indicates "Lead-Free"
PART NUMBER INT ERNAT IONAL RECT IFIER LOGO
56
035H 57
AS SEMBLY LOT CODE
DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04
10
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